Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

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dc.creatorHostein, Richard
dc.creatorBraive, Rémy
dc.creatorLarqué, Matthieu
dc.creatorLee, Ko-Hsin
dc.creatorTalneau, Anne
dc.creatorGratiet, Luc Le
dc.creatorRobert-Philip, Isabelle
dc.creatorSagnes, Isabelle
dc.creatorBeveratos, Alexios
dc.date2009-03-25
dc.date.accessioned2026-07-07T12:56:29Z
dc.date.available2026-07-07T12:56:29Z
dc.descriptionWe report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.
dc.identifierhttps://arxiv.org/abs/0903.4354
dc.identifierhttp://arxiv.org/abs/0903.4354
dc.identifierApplied Physics Letters (2009) 123101
dc.identifierdoi:10.1063/1.3104855
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/224602
dc.subjectQuantum Physics
dc.subjectOptics
dc.titleRoom temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band
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