Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field

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dc.creatorCheckelsky, Joseph G.
dc.creatorLi, Lu
dc.creatorOng, N. P.
dc.date2008-08-06
dc.date2009-03-31
dc.date.accessioned2026-07-07T12:57:57Z
dc.date.available2026-07-07T12:57:57Z
dc.descriptionWe have investigated the behavior of the resistance of graphene at the $n=0$ Landau Level in an intense magnetic field $H$. Employing a low-dissipation technique (with power $P<$3 fW), we find that, at low temperature $T$, the resistance at the Dirac point $R_0(H)$ undergoes a 1000-fold increase from $\sim$10 k$Ω$ to 40 M$Ω$ within a narrow interval of field. The abruptness of the increase suggests that a transition to an insulating, ordered state occurs at the critical field $H_c$. Results from 5 samples show that $H_c$ depends systematically on the disorder, as measured by the offset gate voltage $V_0$. Samples with small $V_0$ display a smaller critical field $H_c$. Empirically, the steep increase in $R_0$ fits acccurately a Kosterlitz-Thouless-type correlation length over 3 decades. The curves of $R_0$ vs. $T$ at fixed $H$ approach the thermal-activation form with a gap $Δ\sim$15 K as $H\to H_c^{-}$, consistent with a field-induced insulating state.
dc.description7 pages, 9 figures. Slight change in title, 1 new figure (9) and revised text
dc.identifierhttps://arxiv.org/abs/0808.0906
dc.identifierhttp://arxiv.org/abs/0808.0906
dc.identifierPhys. Rev. B 79, 115434 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.115434
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/225086
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleDivergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
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