An Efficient Method for Quantum Transport Calculations in Nanostructures using Full Band Structure
| dc.creator | Basu, D. | |
| dc.creator | Gilbert, M. J. | |
| dc.creator | Register, L. F. | |
| dc.creator | Banerjee, S. K. | |
| dc.date | 2008-01-06 | |
| dc.date.accessioned | 2026-07-07T08:52:53Z | |
| dc.date.available | 2026-07-07T08:52:53Z | |
| dc.description | Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure treatment, since it poses a huge computational challenge. We have proposed here an efficient method for calculating full three-dimensionally coupled quantum transport in nanowire transistors including full band structure. We have shown the power of the method by simulating hole transport in p-type Ge nanowire transistors. The hole band structure obtained from our nearest neighbor sp3s* tight binding Hamiltonian agrees well qualitatively with more complex and accurate calculations that take third nearest neighbors into account. The calculated I-V results show how shifting of the energy bands due to confinement can be accurately captured only in a full band full quantum simulation. | |
| dc.description | Additional simulations are being carried on to add to the results section, mainly to investigate band-to-band tunneling in low band gap semiconductors. The pre-print draft is however, complete from the perspective of the quantum transport method that we illustrate | |
| dc.identifier | https://arxiv.org/abs/0801.0880 | |
| dc.identifier | http://arxiv.org/abs/0801.0880 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/145435 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.subject | Materials Science | |
| dc.title | An Efficient Method for Quantum Transport Calculations in Nanostructures using Full Band Structure | |
| dc.type | text |