Charge density wave transport in submicron antidot arrays in NbSe3

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dc.creatorLatishev, Yu. I.
dc.creatorPannetier, B.
dc.creatorMonceau, P.
dc.date1997-11-04
dc.date1997-11-06
dc.date.accessioned2026-07-07T03:09:23Z
dc.date.available2026-07-07T03:09:23Z
dc.descriptionWe demonstrate for the first time that a periodic array of submicrometer holes (antidots) can be patterned into thin single NbSe3 crystals. We report on the study of charge density wave (CDW) transport of the network of mesoscopic units between antidots. Size of the elementary unit can be as small as 0.5 micron along the chain axis and (0.2 micron) x (0.3 micron) in cross section. We observe size effects for Ohmic residual resistance and in CDW transport current-voltage characteristics in submicronic networks.
dc.description4 pages with 1 table and 10 figures. Submitted to European Physical Journal
dc.identifierhttps://arxiv.org/abs/cond-mat/9711018
dc.identifierhttp://arxiv.org/abs/cond-mat/9711018
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27863
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleCharge density wave transport in submicron antidot arrays in NbSe3
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