Band Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts

Simple item page
dc.creatorDeibel, C.
dc.creatorDyakonov, V.
dc.creatorParisi, J.
dc.date2007-12-15
dc.date.accessioned2026-07-07T08:49:32Z
dc.date.available2026-07-07T08:49:32Z
dc.descriptionWe have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)$_2$-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)$_2$ layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition.
dc.description3 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0712.2502
dc.identifierhttp://arxiv.org/abs/0712.2502
dc.identifierApplied Physics Letters 82 (2003) 3559-3561
dc.identifierdoi:10.1063/1.1576500
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/144328
dc.subjectMaterials Science
dc.titleBand Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts
dc.typetext

Files

Collections

arXiv