Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs

Simple item page
dc.creatorHübner, J.
dc.creatorDöhrmann, S.
dc.creatorHägele, D.
dc.creatorOestreich, M.
dc.date2006-08-24
dc.date2009-05-06
dc.date.accessioned2026-07-07T13:17:58Z
dc.date.available2026-07-07T13:17:58Z
dc.descriptionVery high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature dependent effective mass a temperature dependence of the interband matrix element within a common five level kp-theory can model both parameters consistently. A strong decrease of the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.
dc.identifierhttps://arxiv.org/abs/cond-mat/0608534
dc.identifierhttp://arxiv.org/abs/cond-mat/0608534
dc.identifierPhys. Rev. B 79, 193307 (2009) [4 pages]
dc.identifierdoi:10.1103/PhysRevB.79.193307
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/231285
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleTemperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs
dc.typetext

Files

Collections

arXiv