Electric Field Induced Kondo Tunneling Through Double Quantum Dot

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dc.creatorKiselev, M. N.
dc.creatorKikoin, K.
dc.creatorMolenkamp, L. W.
dc.date2002-06-26
dc.date2002-07-18
dc.date.accessioned2026-07-07T06:24:49Z
dc.date.available2026-07-07T06:24:49Z
dc.descriptionIt is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD.
dc.description4 pages, RevTeX, 4 eps figures included
dc.identifierhttps://arxiv.org/abs/cond-mat/0206503
dc.identifierhttp://arxiv.org/abs/cond-mat/0206503
dc.identifierJETP Letters 77, 434-438 (2003)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/96673
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectric Field Induced Kondo Tunneling Through Double Quantum Dot
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