Capacitance of Silicon Pixels

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dc.creatorGorfine, Grant
dc.creatorHoeferkamp, Martin
dc.creatorSantistevan, Geno
dc.creatorSeidel, Sally
dc.date2000-03-28
dc.date.accessioned2026-07-07T10:32:02Z
dc.date.available2026-07-07T10:32:02Z
dc.descriptionCapacitance measurements have been made on silicon pixel sensors of types n+ on n, p+ on n, and n+ on p. The arrays test a variety of implant and gap widths, and the n+ on n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2.
dc.description28 pages including 22 figures
dc.identifierhttps://arxiv.org/abs/hep-ex/0003032
dc.identifierhttp://arxiv.org/abs/hep-ex/0003032
dc.identifierNucl.Instrum.Meth.A460:336-351,2001
dc.identifierdoi:10.1016/S0168-9002(00)01081-0
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/178621
dc.subjectHigh Energy Physics - Experiment
dc.titleCapacitance of Silicon Pixels
dc.typetext

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