Physical Model of Nernst Element

dc.creatorNakamura, Hiroaki
dc.creatorIkeda, Kazuaki
dc.creatorYamaguchi, Satarou
dc.date1998-06-25
dc.date.accessioned2026-07-07T03:10:54Z
dc.date.available2026-07-07T03:10:54Z
dc.descriptionGeneration of electric power by the Nernst effect is a new application of a semiconductor. A key point of this proposal is to find materials with a high thermomagnetic figure-of-merit, which are called Nernst elements. In order to find candidates of the Nernst element, a physical model to describe its transport phenomena is needed. As the first model, we began with a parabolic two-band model in classical statistics. According to this model, we selected InSb as candidates of the Nernst element and measured their transport coefficients in magnetic fields up to 4 Tesla within a temperature region from 270K to 330K. In this region, we calculated transport coefficients numerically by our physical model. For InSb, experimental data are coincident with theoretical values in strong magnetic field.
dc.description4 pages, Latex, This article was presented in the XVII International Conference on Thermoelectrics, Nagoya, Japan(1998)
dc.identifierhttps://arxiv.org/abs/cond-mat/9806296
dc.identifierhttp://arxiv.org/abs/cond-mat/9806296
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28379
dc.subjectMaterials Science
dc.titlePhysical Model of Nernst Element
dc.typetext

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