Multi-excitonic complexes in single InGaN quantum dots

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dc.creatorSeguin, R.
dc.creatorRodt, S.
dc.creatorStrittmatter, A.
dc.creatorReißmann, L.
dc.creatorBartel, T.
dc.creatorHoffmann, A.
dc.creatorBimberg, D.
dc.date2006-10-16
dc.date.accessioned2026-07-07T07:27:32Z
dc.date.available2026-07-07T07:27:32Z
dc.descriptionCathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.
dc.description3 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0610425
dc.identifierhttp://arxiv.org/abs/cond-mat/0610425
dc.identifierAppl. Phys. Lett. 84, 4023 (2004)
dc.identifierdoi:10.1063/1.1751214
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117409
dc.subjectMaterials Science
dc.titleMulti-excitonic complexes in single InGaN quantum dots
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