Current-Driven Magnetic Memory with Tunable Magnetization Switching

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dc.creatorWong, S. K.
dc.creatorPakhomov, A. B.
dc.creatorHung, S. T.
dc.creatorYang, S. G.
dc.creatorWong, C. Y.
dc.date2001-05-15
dc.date.accessioned2026-07-07T02:41:25Z
dc.date.available2026-07-07T02:41:25Z
dc.descriptionCo(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the layers. The I-V loops show asymmetric behavior with hysteresis. When electrons flow in the direction from thick to thin Co layer (positive current), multiple switches were observed on increasing current up to a chosen maximum positive I(write). On decreasing current from I(write), the I-V curve was smooth and characterized by considerably lower resistance. Under reverse current, an abrupt switch to the high resistance state occurred at the current value I(erase)~ -0.9*I(write). Resistance had a maximum at zero current in both states, where the ratio R(high)/R(low) could be as high as factor of four.
dc.description10 pages, with 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0105290
dc.identifierhttp://arxiv.org/abs/cond-mat/0105290
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17735
dc.subjectMesoscale and Nanoscale Physics
dc.titleCurrent-Driven Magnetic Memory with Tunable Magnetization Switching
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