High charge-carrier mobility and low trap density in a rubrene derivative

Simple item page
dc.creatorHaas, S.
dc.creatorStassen, A. F.
dc.creatorSchuck, G.
dc.creatorPernstich, K. P.
dc.creatorGundlach, D. J.
dc.creatorBatlogg, B.
dc.creatorBerens, U.
dc.creatorKirner, H. -J.
dc.date2007-07-03
dc.date.accessioned2026-07-07T08:46:17Z
dc.date.available2026-07-07T08:46:17Z
dc.descriptionWe have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably very similar compared to rubrene. The electric transport properties reflect the different structures: in the latter phase (B) the in-plane hole mobility of 12 cm$^2$/Vs measured on single crystal FETs is just as high as in rubrene crystals, while in the A phase no field-effect could be measured. The high crystal quality, studied in detail for B, reflects itself in the density of gap states: The deep-level trap density as low as $10^{15}$ cm$^{-3}$ eV$^{-1}$ has been measured, and an exponential band tail with a characteristic energy of 22 meV is observed. The bulk mobility perpendicular to the molecular planes is estimated to be of order of $10^{-3}$ -- $10^{-1}$ cm$^2$/Vs.
dc.identifierhttps://arxiv.org/abs/0707.0461
dc.identifierhttp://arxiv.org/abs/0707.0461
dc.identifierPhys. Rev. B 76, 115203 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.115203
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143201
dc.subjectMaterials Science
dc.titleHigh charge-carrier mobility and low trap density in a rubrene derivative
dc.typetext

Files

Collections

arXiv