Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers
| dc.creator | Stanciu, V. | |
| dc.creator | Svedlindh, P. | |
| dc.date | 2005-05-11 | |
| dc.date.accessioned | 2026-07-07T06:24:18Z | |
| dc.date.available | 2026-07-07T06:24:18Z | |
| dc.description | The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process. | |
| dc.description | 3 pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0505278 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0505278 | |
| dc.identifier | Appl. Phys. Lett. 87, 242509 (2005) | |
| dc.identifier | doi:10.1063/1.2123380 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/96498 | |
| dc.subject | Materials Science | |
| dc.title | Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers | |
| dc.type | text |