Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport

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dc.creatorYang, W.
dc.creatorChang, Kai
dc.creatorWu, X. G.
dc.creatorZheng, H. Z.
dc.creatorPeeters, F. M.
dc.date2006-09-21
dc.date.accessioned2026-07-07T07:23:39Z
dc.date.available2026-07-07T07:23:39Z
dc.descriptionWe investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].
dc.description4 pages, 3 figures, Appl. Phys. Lett. (in press)
dc.identifierhttps://arxiv.org/abs/cond-mat/0609532
dc.identifierhttp://arxiv.org/abs/cond-mat/0609532
dc.identifierAppl. Phys. Lett. 89, 132112 (2006)
dc.identifierdoi:10.1063/1.2357888
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116059
dc.subjectMesoscale and Nanoscale Physics
dc.titleInterplay between s-d exchange interaction and Rashba effect: spin-polarized transport
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