First evidence of a strong Magneto-capacitance coupling at room temperature in integrated piezoelectric resonators
| dc.creator | Maglione, M. | |
| dc.creator | Zhu, W | |
| dc.creator | Wang, Z. H. | |
| dc.date | 2004-11-10 | |
| dc.date.accessioned | 2026-07-07T03:02:00Z | |
| dc.date.available | 2026-07-07T03:02:00Z | |
| dc.description | In the vicinity of their resonance frequency, piezoelectric resonators are highly sensitive to small perturbations. The present report is focussed on the magnetic field as a perturbation source. First, magneto-dielectric modulation of more than 10% is achieved at room temperature on both ferroelectric single crystals and quartz discs. Since such piezoelectric resonators are now available as membranes directly integrated on Silicon wafer, we have checked the magneto-dielectric modulation in such resonators. We show here for the first time that a moderate magnetic field of 2.104 Oersteds is able to efficiently tune the impedance of these resonators in their resonance window. | |
| dc.description | 11 Pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0411265 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0411265 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/25249 | |
| dc.subject | Materials Science | |
| dc.title | First evidence of a strong Magneto-capacitance coupling at room temperature in integrated piezoelectric resonators | |
| dc.type | text |