Electrical conduction of silicon oxide containing silicon quantum dots

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dc.creatorPi, X. D.
dc.creatorZalloum, O. H. Y.
dc.creatorKnights, A. P.
dc.creatorMascher, P.
dc.creatorSimpson, P. J.
dc.date2006-04-03
dc.date.accessioned2026-07-07T07:05:12Z
dc.date.available2026-07-07T07:05:12Z
dc.descriptionCurrent-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $ϕ_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an electron tunnelling through an oxide layer between Si quantum dots. The Frenkel-Poole effect can also be used to adequately explain the electrical conduction of the film under the influence of large electric fields. We suggest that at room temperature Si quantum dots can be regarded as traps that capture and emit electrons by means of tunneling.
dc.description14 pages, 5 figures, submitted to J. Phys. Conden. Matt
dc.identifierhttps://arxiv.org/abs/cond-mat/0604028
dc.identifierhttp://arxiv.org/abs/cond-mat/0604028
dc.identifierdoi:10.1088/0953-8984/18/43/016
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109587
dc.subjectMaterials Science
dc.titleElectrical conduction of silicon oxide containing silicon quantum dots
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