On the Origin of the Metal-Insulator Transition in 2D
| dc.creator | Pudalov, V. M. | |
| dc.date | 1997-07-04 | |
| dc.date.accessioned | 2026-07-07T09:11:54Z | |
| dc.date.available | 2026-07-07T09:11:54Z | |
| dc.description | Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of the resistivity. These results evidence for the true metal-insulator transition in 2d, in apparent disagreement with the one-parameter scaling theory. Here we present a model that explains both effects in the framework of the spin-orbit interaction and provides a quantitative agreement with the experimental data. | |
| dc.description | 2 pages (postscript) including 1 table and 1 fig | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9707053 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9707053 | |
| dc.identifier | Intern. Conf. on Localization and Quantum Transport in Solids, Jaszowiec, Poland (1996). T.Dietl ed., Inst. of Physics PAN, Warsaw (1996) 34-35 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/151843 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | On the Origin of the Metal-Insulator Transition in 2D | |
| dc.type | text |