Self Consistent NEGF-LLG Model for Spin-Torque Based Devices
| dc.creator | Salahuddin, Sayeef | |
| dc.creator | Datta, Supriyo | |
| dc.date | 2006-06-26 | |
| dc.date | 2006-08-29 | |
| dc.date.accessioned | 2026-07-07T07:12:51Z | |
| dc.date.available | 2026-07-07T07:12:51Z | |
| dc.description | We present here a self consistent solution of quantum transport, using the Non Equilibrium Green's Function (NEGF) method, and magnetization dynamics, using the Landau-Lifshitz-Gilbert (LLG) formulation. We have applied this model to study current induced magnetic switching due to `spin torque' in a device where the electronic transport is ballistic and the free magnetic layer is sandwiched between two anti-parallel ferromagnetic contacts. The device shows clear hysteretic current-voltage characteristics, at room temperature, with a sharp transition between the bistable states and hence can be used as a non-volatile memory. We show that the proposed design may allow reducing the switching current by an order of magnitude. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0606648 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0606648 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/112228 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Self Consistent NEGF-LLG Model for Spin-Torque Based Devices | |
| dc.type | text |