Magnetophonon resonance in high density, high mobility quantum well systems

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dc.creatorFaugeras, C.
dc.creatorMaude, D. K.
dc.creatorMartinez, G.
dc.creatorRigal, L. B.
dc.creatorProust, C.
dc.creatorFriedland, K. -J.
dc.creatorHey, R.
dc.creatorPloog, K. H.
dc.date2006-01-19
dc.date.accessioned2026-07-07T06:57:40Z
dc.date.available2026-07-07T06:57:40Z
dc.descriptionWe have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures (Friedland et al. Phys. Rev. Lett. 77,4616 (1996).
dc.identifierhttps://arxiv.org/abs/cond-mat/0601440
dc.identifierhttp://arxiv.org/abs/cond-mat/0601440
dc.identifierPhys. Rev. B 69, 673405, (2004)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/107057
dc.subjectMesoscale and Nanoscale Physics
dc.titleMagnetophonon resonance in high density, high mobility quantum well systems
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