Thermal transport in SiC nanostructures
| dc.creator | Ziambaras, Eleni | |
| dc.creator | Hyldgaard, Per | |
| dc.date | 2004-07-06 | |
| dc.date.accessioned | 2026-07-07T02:59:02Z | |
| dc.date.available | 2026-07-07T02:59:02Z | |
| dc.description | SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons. In this paper, however, we show that both material-interface scattering and total-internal reflection significantly limit the SiC-nanostructure phonon transport and hence the heat dissipation in a typical device. For simplicity we focus on planar SiC nanostructures and calculate the thermal transport both parallel to the layers in a substrate/SiC/oxide heterostructure and across a SiC/metal gate or contact. We find that the phonon-interface scattering produces a heterostructure thermal conductivity significantly smaller than what is predicted in a traditional heat-transport calculation. We also document that the high-temperature heat flow across the metal/SiC interface is limited by total-internal reflection effects and maximizes with a small difference in the metal/SiC sound velocities. | |
| dc.description | 15 pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0407122 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0407122 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/24352 | |
| dc.subject | Materials Science | |
| dc.title | Thermal transport in SiC nanostructures | |
| dc.type | text |