Third order susceptibility: general formalism for photoinduced current density in semiconductors
| dc.creator | Combescot, M. | |
| dc.creator | Betbeder-Matibet, O. | |
| dc.date | 2008-10-20 | |
| dc.date | 2008-10-29 | |
| dc.date.accessioned | 2026-07-07T10:13:35Z | |
| dc.date.available | 2026-07-07T10:13:35Z | |
| dc.description | This paper contains a detailed derivation of the photoinduced current density at third order in the coupling between a semiconductor and a multifrequency photon field, starting from its standard textbook expression as a third order time integral of a triple commutator. Due to a major intrinsic problem linked to this triple commutator, such a derivation has been made possible quite recently only, thanks to the tools developed in the composite-boson many-body theory we have just constructed. The photoinduced current density is shown to ultimately read in a compact form, in terms of the Pauli and Coulomb scatterings for exciton-exciton interactions introduced in this theory. Representation in Shiva diagrams is also given to better grasp the physics of the various contributions. | |
| dc.description | added subsection on diagram representation with one figure; added some references; small correction in the last part of the discussion | |
| dc.identifier | https://arxiv.org/abs/0810.3565 | |
| dc.identifier | http://arxiv.org/abs/0810.3565 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/172579 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Third order susceptibility: general formalism for photoinduced current density in semiconductors | |
| dc.type | text |