Noise properties of the SET transistor in the co-tunneling regime

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dc.creatorAverin, D. V.
dc.date2000-10-03
dc.date.accessioned2026-07-07T02:38:55Z
dc.date.available2026-07-07T02:38:55Z
dc.descriptionZero-frequency spectral densities of current noise, charge noise, and their cross-correlation are calculated for the SET transistor in the co-tunneling regime. The current noise has a form expected for the uncorrelated co-tunneling events. Charge noise is created by the co-tunneling and also by the second-order transitions in a single junction. Calculated spectral densities determine transistor characteristics as quantum detector.
dc.description9 pages, 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0010052
dc.identifierhttp://arxiv.org/abs/cond-mat/0010052
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16861
dc.subjectMesoscale and Nanoscale Physics
dc.titleNoise properties of the SET transistor in the co-tunneling regime
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