Bias-driven local density of states alterations and transport in ballistic molecular devices

dc.creatorDeretzis, Ioannis
dc.creatorLa Magna, Antonino
dc.date2008-05-12
dc.date.accessioned2026-07-07T09:38:25Z
dc.date.available2026-07-07T09:38:25Z
dc.descriptionWe study dynamic nonequilibrium electron charging phenomena in ballistic molecular devices at room temperature that compromise their response to bias and whose nature is evidently distinguishable from static Schottky-type potential barriers. Using various metallic/semiconducting carbon nanotubes and alkane dithiol molecules as active parts of a molecular bridge, we perform self-consistent quantum transport calculations under the nonequilibrium Green's function formalism coupled to a three-dimensional Poisson solver for a mutual description of chemistry and electrostatics. Our results sketch a particular tracking relationship between the device's local density of states and the contact electrochemical potentials that can effectively condition the conduction process by altering the electronic structure of the molecular system. Such change is unassociated to electronic/phononic scattering effects while its extent is highly correlated to the conducting character of the system, giving rise to an increase of the intrinsic resistance of molecules with a semiconducting character and a symmetric mass-center disposition.
dc.description10 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/0805.1716
dc.identifierhttp://arxiv.org/abs/0805.1716
dc.identifierJ. Chem. Phys. 128, 164706 (2008)
dc.identifierdoi:10.1063/1.2905216
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160802
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleBias-driven local density of states alterations and transport in ballistic molecular devices
dc.typetext

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