Fe implanted ferromagnetic ZnO

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dc.creatorPotzger, K.
dc.creatorZhou, Shengqiang
dc.creatorReuther, H.
dc.creatorMuecklich, A.
dc.creatorEichhorn, F.
dc.creatorSchell, N.
dc.creatorSkorupa, W.
dc.creatorHelm, M.
dc.creatorFassbender, J.
dc.creatorHerrmannsdoerfer, T.
dc.creatorPapageorgiou, T. P.
dc.date2005-12-13
dc.date.accessioned2026-07-07T06:53:19Z
dc.date.available2026-07-07T06:53:19Z
dc.descriptionRoom-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).
dc.description13 pages, 2 figs, to be published in Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0512267
dc.identifierhttp://arxiv.org/abs/cond-mat/0512267
dc.identifierAppl. Phys. Lett. 88, 052508 (2006)
dc.identifierdoi:10.1063/1.2169912
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/105541
dc.subjectMaterials Science
dc.titleFe implanted ferromagnetic ZnO
dc.typetext

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