Self-directed growth of AlGaAs core-shell nanowires for visible light applications

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dc.creatorChen, C.
dc.creatorShehata, S.
dc.creatorFradin, C.
dc.creatorLaPierre, R.
dc.creatorCouteau, C.
dc.creatorWeihs, G.
dc.date2007-10-02
dc.date.accessioned2026-07-07T08:33:33Z
dc.date.available2026-07-07T08:33:33Z
dc.descriptionAl(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.
dc.description20 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/0710.0518
dc.identifierhttp://arxiv.org/abs/0710.0518
dc.identifierNano Lett.; (Letter); 2007; 7(9); 2584-2589
dc.identifierdoi:10.1021/nl070874k
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/139168
dc.subjectMaterials Science
dc.titleSelf-directed growth of AlGaAs core-shell nanowires for visible light applications
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