Hysteretic memory effects in disordered magnets

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dc.creatorKatzgraber, Helmut G.
dc.creatorZimanyi, Gergely T.
dc.date2005-09-20
dc.date2006-07-28
dc.date.accessioned2026-07-07T06:41:49Z
dc.date.available2026-07-07T06:41:49Z
dc.descriptionWe study the return point as well as the complementary point memory effects numerically with paradigmatic models for random magnets and show that already simple systems with Ising spin symmetry can reproduce the experimental results of Pierce et al. where both memory effects become more pronounced for increasing disorder and return point memory is always better than complementary point memory.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0509515
dc.identifierhttp://arxiv.org/abs/cond-mat/0509515
dc.identifierPhys. Rev. B 74, 020405(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.74.020405
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101809
dc.subjectDisordered Systems and Neural Networks
dc.titleHysteretic memory effects in disordered magnets
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