Proposal for a nanoscale variable resistor/electromechanical transistor
| dc.creator | Bürki, J. | |
| dc.creator | Stafford, C. A. | |
| dc.creator | Stein, D. L. | |
| dc.date | 2008-07-09 | |
| dc.date.accessioned | 2026-07-07T09:49:25Z | |
| dc.date.available | 2026-07-07T09:49:25Z | |
| dc.description | A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced, with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an ``electromechanical transistor,'' is shown to significantly exceed the conductance quantum G_0=2e^2/h, a remarkable figure of merit for a nanoscale device. | |
| dc.description | 6 pages, 8 figures. This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version will be superseded | |
| dc.identifier | https://arxiv.org/abs/0807.1526 | |
| dc.identifier | http://arxiv.org/abs/0807.1526 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/164580 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Proposal for a nanoscale variable resistor/electromechanical transistor | |
| dc.type | text |