Probing charged impurities in suspended graphene using Raman spectroscopy

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dc.creatorNi, Zhen Hua
dc.creatorYu, Ting
dc.creatorLuo, Zhi Qiang
dc.creatorWang, Ying Ying
dc.creatorLiu, Lei
dc.creatorWong, Choun Pei
dc.creatorMiao, Jian Min
dc.creatorHuang, Wei
dc.creatorShen, Ze Xiang
dc.date2008-12-22
dc.date2009-02-19
dc.date.accessioned2026-07-07T13:01:33Z
dc.date.available2026-07-07T13:01:33Z
dc.descriptionCharged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I2D/IG, of suspended graphene is much stronger compared to that of non-suspended graphene, due to the extremely weak CI scattering in the former. This finding is consistent with the ultra-high carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I2D/IG ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.
dc.description18 pages, 4 figures, 1 table. Accepted by ACS Nano
dc.identifierhttps://arxiv.org/abs/0812.4169
dc.identifierhttp://arxiv.org/abs/0812.4169
dc.identifierACS Nano, 2009, 3 (3), 569-574
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/226185
dc.subjectMaterials Science
dc.titleProbing charged impurities in suspended graphene using Raman spectroscopy
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