Andreev reflection in engineered Al/Si/InGaAs(001) junctions

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dc.creatorDe Franceschi, S.
dc.creatorGiazotto, F.
dc.creatorBeltram, F.
dc.creatorSorba, L.
dc.creatorLazzarino, M.
dc.creatorFranciosi, A.
dc.date1999-04-22
dc.date.accessioned2026-07-07T03:13:18Z
dc.date.available2026-07-07T03:13:18Z
dc.descriptionComplete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing the realization of truly Ohmic non-alloyed contacts in low-doped and low-In content InGaAs/Si/Al junctions. It is shown that this technique is ideally suited for the fabrication of high-transparency superconductor-semiconductor junctions. To this end magnetotransport characterization of Al/Si/InGaAs low-n-doped single junctions below the Al critical temperature is presented. Our measurements show Andreev-reflection dominated transport corresponding to junction transparency close to the theoretical limit due to Fermi-velocity mismatch
dc.description9 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9904328
dc.identifierhttp://arxiv.org/abs/cond-mat/9904328
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29250
dc.subjectSuperconductivity
dc.subjectMesoscale and Nanoscale Physics
dc.titleAndreev reflection in engineered Al/Si/InGaAs(001) junctions
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