Are fluorinated BN nanotubes n-type semiconductors?

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The structural and electronic properties of fluorine (F)-doped BN nanotubes (BNNTs) are studied using density functional methods. Our results indicate that F atoms prefer to substitute N atoms, resulting in substantial changes of BN layers. However, F substitutional doping results in no shallow impurity states. The adsorption of F atoms on B sites is more stable than that on N sites. BNNTs with adsorbed F atoms are p-type semiconductors, suggesting the electronic conduction in F-doped multiwalled BNNTs with large conductivity observed experimentally might be of p-type due to the adsorbed F atoms, but not n-type as supposed before.
To be published in Appl. Phys. Lett

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/103192

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0511217
 http://arxiv.org/abs/cond-mat/0511217
 Appl. Phys. Lett. 87, 243133 (2005)
 doi:10.1063/1.2142290

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