Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As

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dc.creatorOhya, Shinobu
dc.creatorShimizu, Hiromasa
dc.creatorHigo, Yutaka
dc.creatorSun, Jiaming
dc.creatorTanaka, Masaaki
dc.date2001-11-09
dc.date.accessioned2026-07-07T02:43:26Z
dc.date.available2026-07-07T02:43:26Z
dc.descriptionWe have studied growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown both on GaAs substrates and on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ~30 K, exhibiting strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film type magneto-optical devices integrated with III-V opto-electronics.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0111163
dc.identifierhttp://arxiv.org/abs/cond-mat/0111163
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18500
dc.subjectMaterials Science
dc.titleGrowth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As
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