Electrostatic interface tuning in correlated superconducting heterostructures

dc.creatorPavlenko, Natalia
dc.creatorKopp, Thilo
dc.date2005-05-30
dc.date2005-10-13
dc.date.accessioned2026-07-07T06:37:53Z
dc.date.available2026-07-07T06:37:53Z
dc.descriptionAn electrostatic field, which is applied to a gated high-temperature superconducting (HTSC) film, is believed to affect the film similar to charge doping. Analyzing the pairing in terms of a t-J model, we show that a coupling to electric dipoles and phonons at the interface of film and dielectric gate localizes the injected charge and leads to a superconductor-insulator transition. This results in a dramatic modification of the doping dependent phase diagram close to and above the optimal doping which is expected to shed light on recent electric field-effect experiments with HTSC cuprates.
dc.description6 pages, 6 figures, to appear in Physical Review B
dc.identifierhttps://arxiv.org/abs/cond-mat/0505714
dc.identifierhttp://arxiv.org/abs/cond-mat/0505714
dc.identifierPhysical Review B 72, 174516 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.174516
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/100548
dc.subjectStrongly Correlated Electrons
dc.subjectSuperconductivity
dc.titleElectrostatic interface tuning in correlated superconducting heterostructures
dc.typetext

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