Anisotropy of flux-flow resistivity in UPt3

Simple item page
dc.creatorLutke-Entrup, N.
dc.creatorBlaauwgeers, R.
dc.creatorPlacais, B.
dc.creatorHuwley, A.
dc.creatorKambe, S.
dc.creatorKrusius, M.
dc.creatorMathieu, P.
dc.creatorSimon, Y.
dc.date2000-09-06
dc.date.accessioned2026-07-07T02:38:39Z
dc.date.available2026-07-07T02:38:39Z
dc.descriptionThe ac prenetration depth, λ_ac(T,H,f), has been measured in superconducting UPt3 single crystals for H\parallel c and H\perp c in the range f=0.01-1MHz and T=0.1-0.4 K. The contributions from bulk pinning and surface pinning have been separated out to yield the flux-flow resistivity ρ_f(H). With H\perp c, rho_f displays magneto-resistance at low field which agrees with previous dc measurements and the characteristic scaling law of clean crystals with anisotropic gap. When H\parallel c, the low-field ρ_f is three times larger. We interpret this property as evidence for flux line with unconventional core structure.
dc.description6 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0009079
dc.identifierhttp://arxiv.org/abs/cond-mat/0009079
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16748
dc.subjectSuperconductivity
dc.subjectStrongly Correlated Electrons
dc.titleAnisotropy of flux-flow resistivity in UPt3
dc.typetext

Files

Collections

arXiv