Fractional form of the 0.7(2e2/h) feature

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dc.creatorBagraev, N. T.
dc.creatorGalkin, N. G.
dc.creatorGehlhoff, W.
dc.creatorKlyachkin, L. E.
dc.creatorMalyarenko, A. M.
dc.creatorShelykh, I. A.
dc.date2006-08-29
dc.date.accessioned2026-07-07T07:19:51Z
dc.date.available2026-07-07T07:19:51Z
dc.descriptionWe present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the top gate voltage that are applied perpendicularly to the plane of the double-slit ring and revealed by the Aharonov-Bohm (AB) and Aharonov-Casher (AC) conductance oscillations, respectively. Firstly, the amplitude and phase sensitivity of the 0.7(2e2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction (SOI). Secondly, the values of the AC conductance oscillations caused by the Rashba SOI are found to take the fractional form with both the plateaus and steps as a function of the top gate voltage.
dc.description5pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0608632
dc.identifierhttp://arxiv.org/abs/cond-mat/0608632
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114778
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleFractional form of the 0.7(2e2/h) feature
dc.typetext

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