Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities
| dc.creator | Zuñiga, Julian A. | |
| dc.creator | Hernandez-Rosero, O. L. | |
| dc.creator | Perez-Merchancano, S. T. | |
| dc.date | 2007-04-30 | |
| dc.date.accessioned | 2026-07-07T07:58:49Z | |
| dc.date.available | 2026-07-07T07:58:49Z | |
| dc.description | In this work the influence of the electric and magnetic fields over a tunneling particle in a rectangular potential barrier is shown, we have taken into account the presence of an impurity at the barrier center and the effects of a hydrostatic pressure parallel to the barrier height considering the BenDaniel-Duke boundary conditions. Given that the particle is moving inside a GaAs-AlxGa1-xAs-GaAs heterostructures it is evident a change in the transmission coefficient due to the impurity concentration and the presence of the hydrostatic pressure. The potential due to the presence of the impurity is approximate with a second degree polynomial function that resolves the discontinuity generated by heavily modifying the transmission coefficient. | |
| dc.description | 3 pages, 3 figures. Submitted to the Microelectronic Journal | |
| dc.identifier | https://arxiv.org/abs/0704.3974 | |
| dc.identifier | http://arxiv.org/abs/0704.3974 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/128140 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities | |
| dc.type | text |