Inter-Layer Screening Length to Electric Field in Thin Graphite Film

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dc.creatorMiyazaki, Hisao
dc.creatorOdaka, Shunsuke
dc.creatorSato, Takashi
dc.creatorTanaka, Sho
dc.creatorGoto, Hidenori
dc.creatorKanda, Akinobu
dc.creatorTsukagoshi, Kazuhito
dc.creatorOotuka, Youiti
dc.creatorAoyagi, Yoshinobu
dc.date2008-03-06
dc.date.accessioned2026-07-07T09:26:47Z
dc.date.available2026-07-07T09:26:47Z
dc.descriptionElectric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained.
dc.description5 pages, 4 figures. To be published in Applied Physics Express
dc.identifierhttps://arxiv.org/abs/0803.0816
dc.identifierhttp://arxiv.org/abs/0803.0816
dc.identifierApplied Physics Express 1 (2008) 034007
dc.identifierdoi:10.1143/APEX.1.034007
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156876
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleInter-Layer Screening Length to Electric Field in Thin Graphite Film
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