Single-hole transistor in p-type GaAs/AlGaAs heterostructures

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dc.creatorGrbic, Boris
dc.creatorLeturcq, Renaud
dc.creatorEnsslin, Klaus
dc.creatorReuter, Dirk
dc.creatorWieck, Andreas D.
dc.date2005-10-21
dc.date2005-10-21
dc.date.accessioned2026-07-07T06:44:37Z
dc.date.available2026-07-07T06:44:37Z
dc.descriptionA single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0510562
dc.identifierhttp://arxiv.org/abs/cond-mat/0510562
dc.identifierAppl. Phys. Lett. 87, 232108 (2005)
dc.identifierdoi:10.1063/1.2139994
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/102836
dc.subjectMesoscale and Nanoscale Physics
dc.titleSingle-hole transistor in p-type GaAs/AlGaAs heterostructures
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