Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

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dc.creatorEuser, Tijmen G.
dc.creatorVos, Willem L.
dc.date2004-10-19
dc.date.accessioned2026-07-07T05:53:01Z
dc.date.available2026-07-07T05:53:01Z
dc.descriptionThis paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the switching magnitude, the time-scale, the induced absorption as well as the spatial homogeneity, in particular for silicon at lambda= 1550 nm. Using a nonlinear absorption model, we calculate carrier depth profiles and define a homogeneity length l_hom. Homogeneity length contours are visualized in a plane spanned by the linear and two-photon absorption coefficients. Such a generalized homogeneity plot allows us to find optimum switching conditions at pump frequencies near v/c= 5000 cm^{-1} (lambda= 2000 nm). We discuss the effect of scattering in photonic crystals on the homogeneity. We experimentally demonstrate a 10% refractive index switch in bulk silicon within 230 fs with a lateral homogeneity of more than 30 micrometers. Our results are relevant for switching of modulators in absence of photonic crystals.
dc.identifierhttps://arxiv.org/abs/physics/0410157
dc.identifierhttp://arxiv.org/abs/physics/0410157
dc.identifierJ. Appl. Phys. 97, 043102 (2005) (7 pages)
dc.identifierdoi:10.1063/1.1846949
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/86509
dc.subjectOptics
dc.titleSpatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors
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