Formation of mid-gap states and ferromagnetism in semiconducting CaB$_6$

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dc.creatorRhyee, Jong-Soo
dc.creatorOh, B. H.
dc.creatorCho, B. K.
dc.creatorJung, M. H.
dc.creatorKim, H. C.
dc.creatorYoon, Y. K.
dc.creatorKim, Jae Hoon
dc.creatorEkino, T.
dc.date2003-10-03
dc.date.accessioned2026-07-07T02:53:57Z
dc.date.available2026-07-07T02:53:57Z
dc.descriptionWe present a consistent overall picture of the electronic structure and ferromagnetic interaction in CaB$_6$, based on our joint transport, optical, and tunneling measurements on high-quality {\em defect-controlled} single crystals. Pure CaB$_6$ single crystals, synthesized with 99.9999 %-pure boron, exhibited fully {\em semiconducting} characteristics, such as monotonic resistance for 2--300 K, a tunneling conductance gap, and an optical absorption threshold at 1.0 eV. {\em Boron-related defects} formed in CaB$_6$ single crystals synthesized with 99.9 %-pure boron induced {\em mid-gap states} 0.18 eV below the conduction band and extra free charge carriers, with the transport, optical, and tunneling properties substantially modified. Remarkably, no ferromagnetic signals were detected from single crystals made with 99.9999 %-pure boron, regardless of stoichiometry, whereas those made with 99.9 %-boron exhibited ferromagnetism within a finite range of carrier density. The possible surmise between the electronic state and magnetization will be discussed.
dc.description9 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0310068
dc.identifierhttp://arxiv.org/abs/cond-mat/0310068
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22362
dc.subjectStrongly Correlated Electrons
dc.titleFormation of mid-gap states and ferromagnetism in semiconducting CaB$_6$
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