High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

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dc.creatorKim, B. M.
dc.creatorBrintlinger, T.
dc.creatorCobas, E.
dc.creatorZheng, Haimei
dc.creatorFuhrer, M. S.
dc.creatorYu, Z.
dc.creatorDroopad, R.
dc.creatorRamdani, J.
dc.creatorEisenbeiser, K.
dc.date2004-01-28
dc.date.accessioned2026-07-07T08:47:17Z
dc.date.available2026-07-07T08:47:17Z
dc.descriptionSingle-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.
dc.description13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0401591
dc.identifierhttp://arxiv.org/abs/cond-mat/0401591
dc.identifierApplied Physics Letters 84, 1946 (2004)
dc.identifierdoi:10.1063/1.1682691
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143546
dc.subjectMesoscale and Nanoscale Physics
dc.titleHigh-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates
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