Controlled Coupling and Occupation of Silicon Atomic Quantum Dots

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dc.creatorHaider, M. Baseer
dc.creatorPitters, Jason L
dc.creatorDiLabio, Gino A.
dc.creatorLivadaru, Lucian
dc.creatorMutus, Josh Y
dc.creatorWolkow, Robert A.
dc.date2008-07-03
dc.date.accessioned2026-07-07T09:48:17Z
dc.date.available2026-07-07T09:48:17Z
dc.descriptionIt is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are negatively charged, it is found that Coulomb repulsion causes DBs separated by less than ~2 nm to experience reduced localized charge. The unoccupied states so created allow a previously unobserved electron tunnel-coupling of DBs, evidenced by a pronounced change in the time-averaged view recorded by scanning tunneling microscopy. Direct control over net electron occupation and tunnel-coupling of multi-DB ensembles through separation controlled is demonstrated. Through electrostatic control, it is shown that a pair of tunnel-coupled DBs can be switched from a symmetric bi-stable state to one exhibiting an asymmetric electron occupation. Similarly, the setting of an antipodal state in a square assembly of four DBs is achieved, demonstrating at room temperature the essential building block of a quantum cellular automata device.
dc.description19 pages, six figure - Supporting Information included
dc.identifierhttps://arxiv.org/abs/0807.0609
dc.identifierhttp://arxiv.org/abs/0807.0609
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164155
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleControlled Coupling and Occupation of Silicon Atomic Quantum Dots
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