Conductance in multiwall carbon nanotubes and semiconductor nanowires : evidence of a universal tunneling barrier

Simple item page
dc.creatorDayen, J. -F.
dc.creatorHoffer, X.
dc.creatorWade, T. L.
dc.creatorKonczykowski, M.
dc.creatorWegrowe, J. -E.
dc.date2004-12-13
dc.date.accessioned2026-07-07T03:02:39Z
dc.date.available2026-07-07T03:02:39Z
dc.descriptionElectronic transport in multiwall carbon nanotubes and semiconductor nanowires was compared. In both cases, the non ohmic behavior of the conductance, the so-called zero bias anomaly, shows a temperature dependence that scales with the voltage dependence. This robust scaling law describes the conductance $G(V,T)$ by a single coefficient $α$. A universal behavior as a function of $α$ is found for all samples. Magnetoconductance measurements furthermore show that the conduction regime is weak localization. The observed behavior can be understood in terms of the coulomb blockade theory, providing that a unique tunnel resistance on the order of 2000 $Ω$ and a Thouless energy of about 40 meV exists for all samples.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0412316
dc.identifierhttp://arxiv.org/abs/cond-mat/0412316
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25470
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleConductance in multiwall carbon nanotubes and semiconductor nanowires : evidence of a universal tunneling barrier
dc.typetext

Files

Collections

arXiv