Exchange in a silicon-based quantum dot quantum computer architecture

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dc.creatorCoppersmith, S. N.
dc.creatorLee, Seungwon
dc.creatorvon Allmen, Paul
dc.date2004-08-25
dc.date.accessioned2026-07-07T02:59:55Z
dc.date.available2026-07-07T02:59:55Z
dc.descriptionIn bulk silicon, intervalley electronic interference has been shown to lead to strong oscillations in the exchange coupling between impurity electronic wavefunctions, posing a serious manufacturability problem for proposed quantum computers. Here we show that this problem does not arise in proposed architectures using Si/SiGe quantum dots because of the large in-plane strain in Si quantum wells together with the strong confinement potential typical of heterostructures.
dc.description4 pages, 2 figures, submitted to APL
dc.identifierhttps://arxiv.org/abs/cond-mat/0408542
dc.identifierhttp://arxiv.org/abs/cond-mat/0408542
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24700
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleExchange in a silicon-based quantum dot quantum computer architecture
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