Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs

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dc.creatorKundrotas, J.
dc.creatorCerskus, A.
dc.creatorValusis, G.
dc.creatorLachab, M.
dc.creatorKhanna, S. P.
dc.creatorHarrison, P.
dc.creatorLinfield, E. H.
dc.date2007-11-04
dc.date.accessioned2026-07-07T08:40:36Z
dc.date.available2026-07-07T08:40:36Z
dc.descriptionWe present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the MQW samples exhibiting 15 nm wells width and 5 nm-thick barrier layers is about 3 10E12 cm-2.
dc.description4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, August 2007
dc.identifierhttps://arxiv.org/abs/0711.0517
dc.identifierhttp://arxiv.org/abs/0711.0517
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/141417
dc.subjectMaterials Science
dc.titleRadiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs
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