Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

Simple item page
dc.creatorSeguin, R.
dc.creatorSchliwa, A.
dc.creatorGermann, T. D.
dc.creatorRodt, S.
dc.creatorWinkelnkemper, M.
dc.creatorPötschke, K.
dc.creatorStrittmatter, A.
dc.creatorPohl, U. W.
dc.creatorHammerschmidt, T.
dc.creatorKratzer, P.
dc.creatorBimberg, D.
dc.date2007-01-02
dc.date.accessioned2026-07-07T07:37:51Z
dc.date.available2026-07-07T07:37:51Z
dc.descriptionA systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0701031
dc.identifierhttp://arxiv.org/abs/cond-mat/0701031
dc.identifierAppl. Phys. Lett. 89, 263109 (2006)
dc.identifierdoi:10.1063/1.2424446
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/120917
dc.subjectMaterials Science
dc.titleControl of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
dc.typetext

Files

Collections

arXiv