Exchange effects on electron transport through single-electron spin-valve transistors

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dc.creatorWetzels, Wouter
dc.creatorBauer, Gerrit E. W.
dc.creatorGrifoni, Milena
dc.date2006-08-09
dc.date.accessioned2026-07-07T07:19:37Z
dc.date.available2026-07-07T07:19:37Z
dc.descriptionWe study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox model for Coulomb blockade and we allow for noncollinear lead magnetization directions. Two distinct exchange mechanisms that have been discussed in the literature are shown to be of comparable strength and are taken into account on equal footing. We present results for the linear conductance as a function of gate voltage and magnetic configuration, and discuss the response of the system to applied magnetic fields.
dc.description15 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0608217
dc.identifierhttp://arxiv.org/abs/cond-mat/0608217
dc.identifierPhys. Rev. B 74, 224406 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.224406
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/114687
dc.subjectMesoscale and Nanoscale Physics
dc.titleExchange effects on electron transport through single-electron spin-valve transistors
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