"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures

Simple item page
dc.creatorSakr, M. R.
dc.creatorRahimi, Maryam
dc.creatorKravchenko, S. V.
dc.creatorColeridge, P. T.
dc.creatorWilliams, R. L.
dc.creatorLapointe, J.
dc.date2001-07-09
dc.date.accessioned2026-07-07T02:42:05Z
dc.date.available2026-07-07T02:42:05Z
dc.descriptionWe show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors ν=1 and 2 and, for the first time, between ν=2 and 3 and between ν=4 and 6. The latter are in contradiction with the original global phase diagram for the quantum Hall effect. We suggest that the application of a (perpendicular) magnetic field induces insulating behavior in metallic p-SiGe heterostructures in the same way as in Si MOSFETs. This insulator is then in competition with, and interrupted by, integer quantum Hall states leading to the multiple re-entrant transitions. The phase diagram which accounts for these transition is similar to that previously obtained in Si MOSFETs thus confirming its universal character.
dc.identifierhttps://arxiv.org/abs/cond-mat/0107171
dc.identifierhttp://arxiv.org/abs/cond-mat/0107171
dc.identifierPhys. Rev. B 64, 161308(R) (2001)
dc.identifierdoi:10.1103/PhysRevB.64.161308
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17996
dc.subjectStrongly Correlated Electrons
dc.title"Forbidden" transitions between quantum Hall and insulating phases in p-SiGe heterostructures
dc.typetext

Files

Collections

arXiv