2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/164681A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approach is believed to be well suited for the investigation of diluted magnetic semiconductor heterostructures.4 pages, 2 figuresMesoscale and Nanoscale PhysicsMaterials Sciencetext