2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/168290We study the mechanism leading to the metallization of the $β$-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process.accepted for publication in physica status solidi - Rapid Research LettersMaterials Sciencetext