Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

2026-07-072026-07-07http://salesiana.dossiersoluciones.com/handle/123456789/42243This report is a compilation of authors' calculations of the Lindhard factors, and of the concentration of primary radiation defects per unit particle fluence in different materials for HEP uses.8 pagesHigh Energy Physics - PhenomenologyLindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEPtext